FT400B Todos los transistores

 

FT400B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FT400B
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO62
 

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FT400B Datasheet (PDF)

 9.1. Size:188K  ixys
 ixfh400n075t2-ixft400n075t2.pdf pdf_icon

FT400B

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con

 9.2. Size:500K  silikron
 ssft4003 ssft4003a.pdf pdf_icon

FT400B

SSFT4003/SSFT4003AMain Product Characteristics: VDSS 40V RDS(on) 2.4m(typ.) ID 200A TO-220 TO-263 Schematic diagramSSFT4003 SSFT4003A Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 9.3. Size:638K  silikron
 ssft4004.pdf pdf_icon

FT400B

SSFT4004 Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A S che ma ti c di ag ra m TO220 Mar ki ng a nd p in Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and rever

 9.4. Size:521K  silikron
 ssft4002.pdf pdf_icon

FT400B

SSFT4002 Main Product Characteristics: VDSS 40V SSFT4002SSFT4002SSFT3906SSFT3906RDS(on) 2.1 mohm ID 220A Features and Benefits: TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capabil

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: GET5306A

 

 
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