FT400B Datasheet and Replacement

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con

SSFT4003/SSFT4003AMain Product Characteristics: VDSS 40V RDS(on) 2.4m(typ.) ID 200A TO-220 TO-263 Schematic diagramSSFT4003 SSFT4003A Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

SSFT4004 Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A S che ma ti c di ag ra m TO220 Mar ki ng a nd p in Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and rever

SSFT4002 Main Product Characteristics: VDSS 40V SSFT4002SSFT4002SSFT3906SSFT3906RDS(on) 2.1 mohm ID 220A Features and Benefits: TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capabil