FXT458
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXT458
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 100
Búsqueda de reemplazo de transistor bipolar FXT458
FXT458
Datasheet (PDF)
..1. Size:26K diodes
fxt458.pdf 
NPN SILICON PLANAR MEDIUM POWER FXT458HIGH VOLTAGE TRANSISTORISSUE 1 SEPTEMBER 1994 T V I V i T T 8 E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I V I II i V V I V I i V V I V I II I
9.1. Size:25K diodes
fxt455.pdf
NPN SILICON PLANARFXT455MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I i i V I i V V I I V I II I V V
9.2. Size:25K diodes
fxt450.pdf
NPN SILICON PLANARFXT450MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I i i V I i V V I I V I II I V V
9.3. Size:25K diodes
fxt453.pdf
NPN SILICON PLANARFXT453MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I i i V I i V V I I V I II I V V
9.4. Size:25K diodes
fxt451.pdf
NPN SILICON PLANARFXT451MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i E-Line T T TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V 8 V I I V I II i V V I I i i V I i V V I I V I II I
Otros transistores... 2N3192
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