2N3716 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3716 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO204AA
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2N3716 datasheet
2n3715 2n3716.pdf
Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for medium speed switching and amplifier applications. These devices feature Total Switching Time at 3 A typically 1.15 s 10 AMPERE Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS Low VCE(sat) typically 0.5 V at IC = 5 A and
2n3713 2n3714 2n3715 2n3716.pdf
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2n3715 2n3716.pdf
NPN Power Silicon Transistor 2N3715 & 2N3716 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3715 2N3716 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Diss
2n3716.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION With TO-3 package APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
Otros transistores... 2N3713HS, 2N3713SM, 2N3714, 2N3714HS, 2N3714SM, 2N3715, 2N3715HS, 2N3715SM, 2SC5200, 2N3716HS, 2N3716SM, 2N3717, 2N3718, 2N3719, 2N372, 2N3720, 2N3721
Parámetros del transistor bipolar y su interrelación.
History: KRA762E | 2SC3434
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