Справочник транзисторов. 2N3716

 

Биполярный транзистор 2N3716 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N3716

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 150 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 4 MHz

Ёмкость коллекторного перехода (Cc): 10 pf

Статический коэффициент передачи тока (hfe): 50

Корпус транзистора: TO204AA

Аналоги (замена) для 2N3716

 

 

2N3716 Datasheet (PDF)

1.1. 2n3716smd.pdf Size:10K _upd

2N3716

2N3716SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.2. 2n3716x.pdf Size:10K _upd

2N3716

查询"2N3716X"供应商 2N3716X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed produ

 1.3. 2n3715 2n3716.pdf Size:272K _motorola

2N3716
2N3716

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for mediumspeed switching and amplifier applications. These devices feature: Total Switching Time at 3 A typically 1.15 s 10 AMPERE Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A

1.4. 2n3713 2n3714 2n3715 2n3716.pdf Size:88K _central

2N3716
2N3716

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 1.5. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3716
2N3716

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rating

1.6. 2n3716.pdf Size:116K _inchange_semiconductor

2N3716
2N3716

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION Ў¤ With TO-3 package APPLICATIONS Ў¤ They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg I

1.7. 2n3715 2n3716.pdf Size:174K _aeroflex

2N3716
2N3716

NPN Power Silicon Transistor 2N3715 & 2N3716 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3715 2N3716 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Diss

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
Back to Top

 


2N3716
  2N3716
  2N3716
 

social 

Список транзисторов

Обновления

BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

Back to Top