FZT649 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Discrete Power & Signal Technologies July 1998 FZT649CECBSOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FZT649 Units25 VVCEO Collector-Emitter Voltage35 VVCBO Collector-B

A Product Line ofDiodes IncorporatedGreen FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 25V Case: SOT223 IC = 3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound; ICM = 8A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type TransistorsNPN TransistorsFZT649 (KZT649)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=25V1 2 3 Low saturation voltage0.2502.30 (typ) Complementary to FZT749Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta =