2N3716SM Todos los transistores

 

2N3716SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3716SM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de transistor bipolar 2N3716SM

 

2N3716SM Datasheet (PDF)

1.1. 2n3716smd.pdf Size:10K _upd

2N3716SM

2N3716SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

4.1. 2n3716x.pdf Size:10K _upd

2N3716SM

查询"2N3716X"供应商 2N3716X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed produ

4.2. 2n3715 2n3716.pdf Size:272K _motorola

2N3716SM
2N3716SM

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for mediumspeed switching and amplifier applications. These devices feature: Total Switching Time at 3 A typically 1.15 s 10 AMPERE Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A

 4.3. 2n3713 2n3714 2n3715 2n3716.pdf Size:88K _central

2N3716SM
2N3716SM

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.4. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3716SM
2N3716SM

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rating

 4.5. 2n3716.pdf Size:116K _inchange_semiconductor

2N3716SM
2N3716SM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3716 DESCRIPTION Ў¤ With TO-3 package APPLICATIONS Ў¤ They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg I

4.6. 2n3715 2n3716.pdf Size:174K _aeroflex

2N3716SM
2N3716SM

NPN Power Silicon Transistor 2N3715 & 2N3716 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3715 2N3716 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Diss

Otros transistores... 2N3714 , 2N3714HS , 2N3714SM , 2N3715 , 2N3715HS , 2N3715SM , 2N3716 , 2N3716HS , C945 , 2N3717 , 2N3718 , 2N3719 , 2N372 , 2N3720 , 2N3721 , 2N3722 , 2N3723 .

 
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