2N3721 Datasheet. Equivalente

 ..1. Size:1285K  sprague
 2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf

 9.1. Size:166K  rca
 2n372.pdf

 9.2. Size:492K  central
 2n3724 2n3725-a.pdf

2N3724 2N3725 www.centralsemi.com 2N3725A DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL 2N3724 2N3725 2N3725A UNITS Collector-Base Voltage VCB

 9.3. Size:108K  central
 2n3726 2n3727.pdf

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 9.4. Size:938K  no
 2n3724l.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,

 9.5. Size:938K  no
 2n3725ub.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,

 9.6. Size:938K  no
 2n3724ub.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,

 9.7. Size:938K  no
 2n3725l.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,

 9.8. Size:11K  semelab
 2n3724.pdf

2N3724 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 9.9. Size:11K  semelab
 2n3724a.pdf

2N3724A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 1.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 9.10. Size:55K  microsemi
 2n3720.pdf

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3720 APPLICATIONS High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES Collector-Emitter Sustaining Voltage Silicon PNP VCEO(SUS) = 60 Vdc (Min) - 2N3720 Power Transistors DC Current Gain hFE = 25-180 @ IC = 1.0 Adc Low Co