GC100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GC100
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.05 W
   Tensión colector-base (Vcb): 15 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.015 A
   Temperatura operativa máxima (Tj): 90 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 18
   Paquete / Cubierta: TO1

Búsqueda de reemplazo de transistor bipolar GC100

GC100 Datasheet (PDF)

0.1. Size:15K international rectifier
irgc100b120k.pdf

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

0.2. Size:79K international rectifier
irgc100b60kb.pdf

PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

0.3. Size:43K international rectifier
irgc100b120kb.pdf

0.4. Size:34K international rectifier
irgc100b60ub.pdf

PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf

0.5. Size:94K international rectifier
irgc100b120ub.pdf

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer

0.6. Size:15K international rectifier
irgc100b120u.pdf

PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic

0.7. Size:128K infineon
sigc100t65r3e.pdf

SIGC100T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC100T65R

0.8. Size:127K infineon
sigc100t60r3.pdf

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

0.9. Size:78K infineon
igc100t65t8rm.pdf

IGC100T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC100T6

0.10. Size:127K infineon
sigc100t60r3e.pdf