GC100 Datasheet. Specs and Replacement
Type Designator: GC100
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 90 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
Package: TO1
- BJT ⓘ Cross-Reference Search
GC100 datasheet
0.1. Size:15K international rectifier
irgc100b120k.pdf 

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark E... See More ⇒
0.2. Size:79K international rectifier
irgc100b60kb.pdf 

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ.=1.9V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E ... See More ⇒
0.4. Size:34K international rectifier
irgc100b60ub.pdf 

PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ. = 2.8V 10 s Short Circuit Capability Square RBSOA @ IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated Benchmark Efficiency for UPS and Welding Applications E 150mm Waf... See More ⇒
0.5. Size:94K international rectifier
irgc100b120ub.pdf 

PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability IC(nom) @ 25 C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E Benchmark Efficiency above 20KHz 150mm Wafer ... See More ⇒
0.6. Size:15K international rectifier
irgc100b120u.pdf 

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Effic... See More ⇒
0.7. Size:128K infineon
sigc100t65r3e.pdf 

SIGC100T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC100T65R... See More ⇒
0.8. Size:127K infineon
sigc100t60r3.pdf 

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par... See More ⇒
0.9. Size:78K infineon
igc100t65t8rm.pdf 

IGC100T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC100T6... See More ⇒
0.10. Size:127K infineon
sigc100t60r3e.pdf 

SIGC100T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par... See More ⇒
Detailed specifications: GBC109, GBD179, GBD189, GBD190, GBD266, GBD267, GBD645, GBD646, A1015, GC101, GC102, GC103, GC104, GC111, GC112, GC115, GC116
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