GC121 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GC121

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.07 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 90 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO5

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GC121 datasheet

 0.1. Size:65K  infineon
 sigc121t120r2cs.pdf pdf_icon

GC121

SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES 1200V NPT technology 175 m chip This chip is used for C low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications easy paralleling G drives, SMPS, resonant integrated gate resistor E applications Chip Type VCE ICn Die Size Package Ordering Code

 0.2. Size:65K  infineon
 sigc121t120r2cl.pdf pdf_icon

GC121

SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES This chip is used for C 1200V NPT technology power module 180 m chip BSM75GD120DLC low turn-off losses positive temperature coefficient Applications easy paralleling G drives E integrated gate resistor Chip Type VCE ICn Die Size Package Ordering Code Q67041- SIGC121T120R2CL

 0.3. Size:65K  infineon
 sigc121t60nr2c.pdf pdf_icon

GC121

SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES This chip is used for C 600V NPT technology 100 m chip positive temperature coefficient IGBT Modules easy paralleling integrated gate resistor Applications G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4684- SIGC121T60NR2C 600V 150A 11 x 11 mm2 sawn on foil A001 MEC

 0.4. Size:64K  infineon
 sigc121t120r2c.pdf pdf_icon

GC121

SIGC121T120R2C IGBT Chip in NPT-technology Features This chip is used for 1200V NPT technology power module C BSM 75GD120DN2 low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G integrated gate resistor E Chip Type VCE IC Die Size Package SIGC121T120R2C 1200V 75A 11.08 X 11.08 mm2 sawn o

MOSTRAR MÁS

Otros transistores... GC104, GC111, GC112, GC115, GC116, GC117, GC118, GC120, 2SD718, GC122, GC123, GC181, GC181A, GC189, GC195, GC197, GC198