GD120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GD120 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 33 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 1.3 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.5 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO3
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GD120 datasheet
0.1. Size:277K eupec
bsm35gd120dn2 bsm35gd120dn2 e3224.pdf 
BSM 35 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67 BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 120
0.2. Size:250K eupec
bsm10gd120dn2.pdf
BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1
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bsm50gd120dn2.pdf
BSM 50 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-
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bsm75gd120dn2.pdf
BSM 75 GD 120 DN2 IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k
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bsm75gd120dlc.pdf
Technische Information / Technical Information IGBT-Module BSM75GD120DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 75 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 125 A Periodischer Kollektor Spitzenstrom
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bsm15gd120dn2.pdf
BSM 15 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67 BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1
0.7. Size:277K eupec
bsm10gd120dn2 e3224.pdf
BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
0.8. Size:184K eupec
bsm35gd120dlc e3224.pdf
Technische Information / Technical Information IGBT-Module BSM35GD120DLC E3224 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 35 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 70 A Periodischer Kollektor Spitzens
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bsm25gd120dn2.pdf
BSM 25 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1
0.10. Size:59K eupec
bsm50gd120dlc.pdf
Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 85 A Periodischer Kollektor Spitzenstrom
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bsm50gd120dn2g.pdf
BSM 50 GD 120 DN2G IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate
0.12. Size:444K eupec
bsm50gd120dn2e3226.pdf
-40...+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Geh usema e / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlie lich f r technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit
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bsm25gd120dn2 e3224.pdf
BSM 25 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
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hgd120n06sl hgi120n06sl.pdf
HGD120N06SL , HGI120N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 8.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 12 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 47 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application
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hgi120n10al hgd120n10al.pdf
, HGI120N10AL HGD120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 60 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectific
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hgi120n10a hgd120n10a.pdf
, HGI120N10A HGD120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 59 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in
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