GD120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GD120
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 33 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 1.3 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar GD120
GD120 Datasheet (PDF)
bsm35gd120dn2 bsm35gd120dn2 e3224.pdf
BSM 35 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 35 GD 120 DN2 1200V 50A ECONOPACK 2 C67076-A2506-A67BSM35GD120DN2E3224 1200V 50A ECONOPACK 2K C67070-A2506-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 120
bsm10gd120dn2.pdf
BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm50gd120dn2.pdf
BSM 50 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-
bsm75gd120dn2.pdf
BSM 75 GD 120 DN2IGBT Power Module Solderable Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k
bsm75gd120dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM75GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 75 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 125 APeriodischer Kollektor Spitzenstrom
bsm15gd120dn2.pdf
BSM 15 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm10gd120dn2 e3224.pdf
BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage
bsm35gd120dlc e3224.pdf
Technische Information / Technical InformationIGBT-ModuleBSM35GD120DLC E3224IGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 35 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 70 APeriodischer Kollektor Spitzens
bsm25gd120dn2.pdf
BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1
bsm50gd120dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM50GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 85 APeriodischer Kollektor Spitzenstrom
bsm50gd120dn2g.pdf
BSM 50 GD 120 DN2GIGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate
bsm50gd120dn2e3226.pdf
-40...+1252006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-01BSM 50 GD 120 DN2 E3226Gehusemae / SchaltbildPackage outline / Circuit diagramm9 2006-02-01Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fr technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit
bsm25gd120dn2 e3224.pdf
BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage
hgd120n06sl hgi120n06sl.pdf
HGD120N06SL , HGI120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness47 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication
hgi120n10al hgd120n10al.pdf
,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific
hgi120n10a hgd120n10a.pdf
,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in
Otros transistores... GCN53 , GCN54 , GCN55 , GCN56 , GD100 , GD110 , GD114 , GD115 , C945 , GD125 , GD130 , GD133 , GD134 , GD135 , GD142 , GD150 , GD151 .
