GD170C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GD170C
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5.3 W
Tensión colector-base (Vcb): 33 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO3
Búsqueda de reemplazo de GD170C
GD170C Datasheet (PDF)
bsm50gd170dl.pdf

European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH
hgd170n10a hgi170n10a.pdf

HGD170N10A , P-1HGI170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching16.2RDS(on),typ mW Enhanced Body diode dv/dt capability39 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir
hgd170n10al hgi170n10al.pdf

HGD170N10AL , P-1HGI170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness38.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BTC2383K3 | BC856BW | UMX3N | FJL4315 | BC859CW | DTB513ZM | 2N1665
History: BTC2383K3 | BC856BW | UMX3N | FJL4315 | BC859CW | DTB513ZM | 2N1665



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