GD170C Datasheet, Equivalent, Cross Reference Search
Type Designator: GD170C
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5.3 W
Maximum Collector-Base Voltage |Vcb|: 33 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
GD170C Transistor Equivalent Substitute - Cross-Reference Search
GD170C Datasheet (PDF)
bsm50gd170dl.pdf
European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH
hgd170n10a hgi170n10a.pdf
HGD170N10A , P-1HGI170N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching16.2RDS(on),typ mW Enhanced Body diode dv/dt capability39 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Cir
hgd170n10al hgi170n10al.pdf
HGD170N10AL , P-1HGI170N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness38.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification i
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
