2N3735 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3735  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 9 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO5

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2N3735 datasheet

 0.1. Size:18K  semelab
2n3735csm4.pdf pdf_icon

2N3735

2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) FEATURES 0.23 rad. (0.009) High Voltage 3 2 Ceramic Surface Mount Package 0.23 4 1 min

 0.2. Size:178K  microsemi
2n3735l.pdf pdf_icon

2N3735

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol M

 9.2. Size:17K  semelab
2n3738.pdf pdf_icon

2N3735

2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector A

Otros transistores... 2N3730, 2N3731, 2N3732, 2N3733, 2N373-33, 2N3734, 2N3734A, 2N3734S, 2SA1943, 2N3735S, 2N3736, 2N3736A, 2N3737, 2N3737A, 2N3738, 2N3739, 2N374