2N3740AR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3740AR  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

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2N3740AR datasheet

 7.1. Size:62K  microsemi
 2n3740a.pdf pdf_icon

2N3740AR

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3740A APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cuto

 7.2. Size:221K  inchange semiconductor
 2n3740a.pdf pdf_icon

2N3740AR

isc Silicon PNP Power Transistor 2N3740A DESCRIPTION Collector-Emitter Breakdown Voltage- V =-60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -

 8.1. Size:10K  semelab
 2n3740r.pdf pdf_icon

2N3740AR

2N3740R Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 8.2. Size:62K  microsemi
 2n3740.pdf pdf_icon

2N3740AR

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3740 APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NP

MOSTRAR MÁS

Otros transistores... 2N3736A, 2N3737, 2N3737A, 2N3738, 2N3739, 2N374, 2N3740, 2N3740A, BC546, 2N3741, 2N3741A, 2N3741R, 2N3742, 2N3742S, 2N3743, 2N3743S, 2N3744