2N3741 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3741  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

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2N3741 datasheet

 ..1. Size:62K  microsemi
2n3741.pdf pdf_icon

2N3741

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741 APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Complementary to NP

 ..2. Size:196K  inchange semiconductor
2n3740 2n3741.pdf pdf_icon

2N3741

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL

 0.1. Size:32K  semelab
2n3741smd.pdf pdf_icon

2N3741

2N3741 SMD SEME LAB MECHANICAL DATA MEDIUM POWER PNP Dimensions in mm SILICON POWER TRANSISTOR LOW SATURATION VOLTAGE HIGH GAIN FEATURES Hermetically sealed Surface Mount Package. Small Footprint - efficient use of PCB space. Lightweight

 0.2. Size:62K  microsemi
2n3741a.pdf pdf_icon

2N3741

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE (561) 842-0305 FAX (561) 845-7813 2N3741A APPLICATIONS Drivers Switches Medium-Power Amplifiers FEATURES Medium Power Low Saturation Voltage 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics hFE @ IC = 250 mA 30-100 PNP Transistors Excellent Safe Area Limits Low Collector Cuto

Otros transistores... 2N3737, 2N3737A, 2N3738, 2N3739, 2N374, 2N3740, 2N3740A, 2N3740AR, 2SC2383, 2N3741A, 2N3741R, 2N3742, 2N3742S, 2N3743, 2N3743S, 2N3744, 2N3745