2N3766SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N3766SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3766SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

NPN Power Silicon Transistor2N3766 & 2N3767Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 TO-66 (TO-213AA) PackageMaximum RatingsRatings Symbol 2N3766 2N3767 UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base Voltage VCBO 80 100 VdcEmitter - Base Voltage VEBO 6.0 VdcBase Current IB 2.0 AdcCollector Current IC 4.0 AdcTotal Power Di