2N3789 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col

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isc Silicon PNP Power Transistor 2N3789DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat

2N3789XSMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 60V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

2N3789XDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in