2N3826 Todos los transistores

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2N3826 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3826

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO92

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2N3826 Datasheet (PDF)

5.1. 2n3820.pdf Size:26K _fairchild_semi

2N3826
2N3826

2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VGS Gate-S

5.2. 2n3821 2n3822 2n3824.pdf Size:88K _central

2N3826
2N3826

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.3. 2n3828.pdf Size:77K _secos

2N3826

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? General Purpose Amplifier Transistor TO-92 G H ? Emitter ? Base ? Collector J A D Collector B Millimeter REF. ?? Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - ?? D 3.30 3.81 E 0.36 0.56 E C F Ba

5.4. 2n3821 2n3822.pdf Size:94K _interfet

2N3826

Databook.fxp 1/13/99 2:09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V ? Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/C At 25C free air temperature: 2N382

5.5. 2n3821 2n3822 2n3823.pdf Size:54K _microsemi

2N3826
2N3826

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipation T

Otros transistores... 2N3815 , 2N3816 , 2N3816A , 2N3817 , 2N3817A , 2N3818 , 2N382 , 2N3825 , BC639 , 2N3827 , 2N3828 , 2N3829 , 2N383 , 2N3830 , 2N3830L , 2N3831 , 2N3832 .

 


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