HT3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HT3
Código: 3T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO236
Búsqueda de reemplazo de HT3
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HT3 datasheet
0.1. Size:1123K magnachip
mdht3n40urh.pdf 
MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4 General Description Features The MDHT3N40 uses advanced Magnachip s VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) 3.4 excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications
0.2. Size:143K chenmko
cht3055zgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT3055ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation current
0.3. Size:125K chenmko
cht3019xgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT3019XGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05
0.4. Size:97K chenmko
cht3019gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT3019GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. (
0.5. Size:134K chenmko
cht32czgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT32CZGP SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation c
0.6. Size:127K chenmko
cht3019zgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT3019ZGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-73/SOT-223 * Suitable for high packing density. * High saturation current capability. 1.65+0.15 * Voltage controlled small signal switch. 6.50+0.20 0.90+0.05 2
0.7. Size:153K chenmko
cht3946upngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT3946UPNGP SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V)
0.8. Size:137K chenmko
cht31czgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT31CZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation current
0.10. Size:824K oriental semi
osg60r060ht3f.pdf
OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
0.12. Size:935K oriental semi
osg60r070ht3f.pdf
OSG60R070HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
0.17. Size:952K oriental semi
osg60r028ht3f.pdf
OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
0.21. Size:926K oriental semi
osg60r060ht3zf.pdf
OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.22. Size:931K oriental semi
osg60r070ht3zf.pdf
OSG60R070HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.24. Size:948K oriental semi
osg60r030ht3zf.pdf
OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.25. Size:952K oriental semi
osg60r022ht3zf.pdf
OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.26. Size:960K oriental semi
osg60r031ht3zf.pdf
OSG60R031HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.27. Size:967K oriental semi
osg60r038ht3zf.pdf
OSG60R038HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.28. Size:964K oriental semi
osg60r018ht3zf.pdf
OSG60R018HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
0.30. Size:955K oriental semi
osg60r017ht3f.pdf
OSG60R017HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
0.32. Size:978K oriental semi
osg60r020ht3f.pdf
OSG60R020HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
Otros transistores... HSE908
, HSE909
, HSE910
, HSE911
, HSE912
, HT100
, HT101
, HT2
, 2SC828
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, HVT1000
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History: HSE838
| BD116
| CT763
