HT3 Datasheet and Replacement

MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4General Description Features The MDHT3N40 uses advanced Magnachips VDS = 400V MOSFET Technology, which provides low on-state @VGS = 10V ID = 1.5A resistance, high switching performance and @VGS = 10V RDS(ON) 3.4 excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Applications

CHENMKO ENTERPRISE CO.,LTDCHT3055ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 60 Volts CURRENT 6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.156.50+0.20* Suitable for high packing density.0.90+0.052.0+0.33.00+0.10* High saturation current

CHENMKO ENTERPRISE CO.,LTDCHT3019XGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-62/SOT-89* Suitable for high packing density.* High saturation current capability.* Voltage controlled small signal switch. 4.6MAX. 1.6MAX.1.7MAX. 0.4+0.05

CHENMKO ENTERPRISE CO.,LTDCHT3019GPSURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Suitable for high packing density.* High saturation current capability.* Voltage controlled small signal switch. (

CHENMKO ENTERPRISE CO.,LTDCHT32CZGPSURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 100 Volts CURRENT 3 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.156.50+0.20* Suitable for high packing density.0.90+0.052.0+0.33.00+0.10* High saturation c

CHENMKO ENTERPRISE CO.,LTDCHT3019ZGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-73/SOT-223* Suitable for high packing density.* High saturation current capability.1.65+0.15* Voltage controlled small signal switch. 6.50+0.200.90+0.052

CHENMKO ENTERPRISE CO.,LTDCHT3946UPNGPSURFACE MOUNT Complementary Small Signal TransistorVOLTAGE 40 Volts CURRENT 0.2 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT363)* Low current (Max.=200mA). * Suitable for high packing density.* Low voltage (Max.=40V)

CHENMKO ENTERPRISE CO.,LTDCHT31CZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 100 Volts CURRENT 3 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.156.50+0.20* Suitable for high packing density.0.90+0.052.0+0.33.00+0.10* High saturation current

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

OSG60R070HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R070HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R031HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R038HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R018HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

OSG60R017HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

OSG60R020HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit