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IMB10A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IMB10A
   Código: B10
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SO6

 Búsqueda de reemplazo de transistor bipolar IMB10A

 

IMB10A Datasheet (PDF)

 ..1. Size:62K  rohm
umb10n imb10a b10 sot23-6 sot363.pdf pdf_icon

IMB10A

Transistors General purpose (dual digital transistors) UMB10N / IMB10A FFeatures FExternal dimensions (Units mm) 1) Two DTA123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP

 ..2. Size:118K  rohm
emb10 umb10n imb10a umb10n.pdf pdf_icon

IMB10A

EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interference. Each l

 0.1. Size:1355K  rohm
emb10fha umb10nfha imb10afra.pdf pdf_icon

IMB10A

EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (

 9.1. Size:179K  chenmko
chimb10gp.pdf pdf_icon

IMB10A

CHENMKO ENTERPRISE CO.,LTD CHIMB10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) * High saturati

Otros transistores... IDD687 , IDD798 , IDI8000 , IDI8001 , IDI8002 , IDI8003 , IDI8004 , IDI8005 , 2SC2655 , IMB11A , IMB16 , IMB17A , IMB1A , IMB2A , IMB3A , IMB4A , IMB5A .

History: 2SB92 | 2SC183A

 

 
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