IMB10A Datasheet. Specs and Replacement
Type Designator: IMB10A 📄📄
SMD Transistor Code: B10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Package: SO6
IMB10A Substitution
- BJT ⓘ Cross-Reference Search
IMB10A datasheet
umb10n imb10a b10 sot23-6 sot363.pdf 
Transistors General purpose (dual digital transistors) UMB10N / IMB10A FFeatures FExternal dimensions (Units mm) 1) Two DTA123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP ... See More ⇒
emb10 umb10n imb10a umb10n.pdf
EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interference. Each l... See More ⇒
emb10fha umb10nfha imb10afra.pdf
EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHIMB10GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) SC-74/SOT-457 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) * High saturati... See More ⇒
Detailed specifications: IDD687, IDD798, IDI8000, IDI8001, IDI8002, IDI8003, IDI8004, IDI8005, 2SC2655, IMB11A, IMB16, IMB17A, IMB1A, IMB2A, IMB3A, IMB4A, IMB5A
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