IMD3A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IMD3A
Material: Si
Polaridad de transistor: p*n
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SO6
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IMD3A Datasheet (PDF)
emd3 umd3n imd3a umd3n.pdf

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer
umd3n imd3a d3 sot23-6sot363.pdf

TransistorsGeneral purpose(dual digital transistors)UMD3N / IMD3AFFeatures FExternal dimensions (Units: mm)1) Both the DTA114E chip andDTC114E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi
emd3fha umd3nfha imd3afra.pdf

EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2T7236C | 3DA5A | BC68-25PA | KTC4374Y | LBC807-40WT3G | 3DD3145_A6 | 2SD1231
History: 2T7236C | 3DA5A | BC68-25PA | KTC4374Y | LBC807-40WT3G | 3DD3145_A6 | 2SD1231



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