IMD3A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMD3A  📄📄 

Material: Si

Polaridad de transistor: p*n

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SO6

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IMD3A datasheet

 ..1. Size:98K  rohm
 emd3 umd3n imd3a umd3n.pdf pdf_icon

IMD3A

EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interfer

 ..2. Size:92K  rohm
 umd3n imd3a d3 sot23-6sot363.pdf pdf_icon

IMD3A

Transistors General purpose (dual digital transistors) UMD3N / IMD3A FFeatures FExternal dimensions (Units mm) 1) Both the DTA114E chip and DTC114E chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxi

 0.1. Size:1440K  rohm
 emd3fha umd3nfha imd3afra.pdf pdf_icon

IMD3A

EMD3FHA / UMD3NFHA / IMD3AFRA EMD3 / UMD3N / IMD3A Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline (6) EMT6 UMT6 Parameter Value (5) (6) (4) (5) (4) VCC 50V (1) (1) (2) (2) IC(MAX.) 100mA (3) (3) R1 10kW EMD3 EMD3FHA UMD3NFHA UMD3N (SC-107C) R2 SOT-353 (SC-88) 10kW SMT6 (4)

Otros transistores... IMBT4401, IMBT4402, IMBT4403, IMD10A, IMD14, IMD16A, IMD1A, IMD2A, MJE350, IMD6A, IMD8A, IMD9A, IMH10A, IMH11A, IMH14A, IMH1A, IMH2A