IMD3A Datasheet, Equivalent, Cross Reference Search
Type Designator: IMD3A
Material of Transistor: Si
Polarity: p*n
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SO6
IMD3A Transistor Equivalent Substitute - Cross-Reference Search
IMD3A Datasheet (PDF)
emd3 umd3n imd3a umd3n.pdf
EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer
umd3n imd3a d3 sot23-6sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMD3N / IMD3AFFeatures FExternal dimensions (Units: mm)1) Both the DTA114E chip andDTC114E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi
emd3fha umd3nfha imd3afra.pdf
EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
