J461 Datasheet. Equivalente

 0.1. Size:723K  nec
 2sj461a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit mm) Can be driven by a

 0.2. Size:711K  nec
 2sj461.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device

 0.3. Size:149K  vishay
 sqj461ep.pdf

SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition RDS(on) ( ) at VGS = - 10 V 0.016 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.021 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Single Compliant

 0.4. Size:1139K  kexin
 2sj461-3.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-50V 1 2 ID =-0.1 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 50 (VGS =-4V) 1.9 -0.2 RDS(ON) 100 (VGS =-2.5V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag

 0.5. Size:1130K  kexin
 2sj461.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ461 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V 1 2 ID =-0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1 -0.1 RDS(ON) 100 (VGS =-2.5V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS