DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461AP-CHANNEL MOSFET FOR HIGH SPEED SWITCHINGDESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) Can be driven by a

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGPACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2by a 2.5 V power source. +0.10.65 0.151.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device

SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant

SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 50 (VGS =-4V)1.9 -0.2 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag

SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1-0.1 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS