Биполярный транзистор J461 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: J461
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.025 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 7
Корпус транзистора: TO22
J461 Datasheet (PDF)
2sj461a.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461AP-CHANNEL MOSFET FOR HIGH SPEED SWITCHINGDESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES PACKAGE DRAWING (Unit: mm) Can be driven by a
2sj461.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ461P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGPACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2by a 2.5 V power source. +0.10.65 0.151.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device
sqj461ep.pdf
SQJ461EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.021 AEC-Q101 QualifieddID (A) - 30 100 % Rg and UIS TestedConfiguration Single Compliant
2sj461-3.pdf
SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 50 (VGS =-4V)1.9 -0.2 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag
2sj461.pdf
SMD Type MOSFETP-Channel MOSFET2SJ461SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V1 2 ID =-0.1 A+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 50 (VGS =-4V) 1.9+0.1-0.1 RDS(ON) 100 (VGS =-2.5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050