1502 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1502 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 110
Encapsulados: TO92
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1502 datasheet
mje15028-31 mje15028.pdf
Order this document MOTOROLA by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15028 Complementary Silicon Plastic MJE15030* Power Transistors PNP * MJE15029 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc * MJE15031 hFE = 20 (Min) @ IC = 4.0 Adc *Motorola Preferred Device
pbls1502y-v.pdf
PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch Rev. 02 4 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1 Product overview Type number Package Philips EIAJ PBLS1502Y SOT363 SC-88 PBLS1502V SOT666 - 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped tran
mje15028 mje15030 mje15029 mje15031.pdf
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-
mje15029g.pdf
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll
mj15023 mj15025.pdf
MJ15023 (PNP), MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area 16 AMPERES High DC Current Gain SILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN) 200 - 250 VOLTS, 250 WATTS T
mj15022g.pdf
NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack
mj15025g.pdf
PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa
mj15024g.pdf
NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Pack
mj15022 mj15024.pdf
MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS
mje15028g.pdf
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll
mj15023g.pdf
PNP - MJ15023, MJ15025* *MJ15025 is a Preferred Device Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features http //onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES Pb-Free Packa
2sb1502.pdf
Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 Complementary to 2SD2275 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 1.5 Low collector to emitter saturation voltage VCE(sat)
mj15026.pdf
MJ15026 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector
cjf15028-29.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CJF15028 NPN CJF15029 PNP TO-220FP Fully Isolated Plastic Package Designed for General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emit
mje15028 29 30 31.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package MJE15028, MJE15030 MJE15029, MJE15031 MJE15028, 15030 NPN PLASTIC POWER TRANSISTORS MJE15029, 15031 PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B
mj15029.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DES
mj15028.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. PINNING PIN DESCR
mj15022 mj15024.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Bas
ssf1502d.pdf
SSF1502D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.15 (typ) ID 8A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1502g5.pdf
SSF1502G5 Main Product Characteristics VDSS 150V RDS(on) 0.14 (typ) ID 6A Mar ki ng a nd p in Sc he mati c di a gram SOT223 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
kxa1502.pdf
SMD Type Transistors PNP Transistors KXA1502 1.70 0.1 Features Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current -C
2sa1502.pdf
SMD Type Transistors PNP Transistors 2SA1502 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SC3863 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
kxc1502.pdf
SMD Type Transistors NPN Transistors KXC1502 1.70 0.1 Features Collector Power Dissipation PC=0.5W Collector Current IC=1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current -Continu
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDIS1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1502 is suitable device for DC to DC
mdd1502rh.pdf
MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDD1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1502 is suitable device for DC to DC
nce1502r.pdf
Pb Free Product http //www.ncepower.com NCE1502R NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
mj15026.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 APPLICATIONS Designed for high power audio, disk head positioners , and other linear applications. ABSOLUTE MAXI
mje15028.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15028 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15029 APPLICATIONS Designed for use as high freque
mj15022 mj15024.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT MJ15022 350 V Collector-Base Voltag
mje15029.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 APPLICATIONS Designed for use as high fre
2sb1502.pdf
isc Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -4A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -4A CE(sat) C Complement to Type 2SD2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 55W HiFi o
mj15023 mj15025.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT
mj15025.pdf
isc Silicon PNP Power Transistors MJ15025 DESCRIPTION Complement to Type NPN MJ15024 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
mj15024.pdf
isc Silicon NPN Power Transistors MJ15024 DESCRIPTION Complement to Type PNP MJ15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
mj15026.pdf
isc Silicon NPN Power Transistor MJ15026 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h = 25(Min.)@I = 5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 5A CE(sat C Complement to the PNP MJ15027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positi
mje15028.pdf
isc Silicon NPN Power Transistor MJE15028 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15029 Minimum Lot-to-Lot variations for robust device performance and reliable operat
mj15027.pdf
isc Silicon PNP Power Transistor MJ15027 DESCRIPTION High current capability High power dissipation Complement to the NPN MJ15026 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier DC to DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
mj15022 mj15024.pdf
isc Silicon NPN Power Transistors MJ15022/15024 DESCRIPTION Complement to Type PNP MJ15023/15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARA
mje15029.pdf
isc Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 Minimum Lot-to-Lot variations for robust device performance and reliable ope
mj15023.pdf
isc Silicon PNP Power Transistors MJ15023 DESCRIPTION Complement to Type NPN MJ15022 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE
Otros transistores... 121-744, 121-746, 121-755, 121-792, 1401, 1402, 142T2, 1501, 2SA1837, 152NU70, 153NU70, 154NU70, 155NU70, 1601, 1602, 16029, 16039
Parámetros del transistor bipolar y su interrelación.
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