1502 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby MJ15023/DSEMICONDUCTOR TECHNICAL DATAPNPMJ15023MJ15025 *Silicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications.16 AMPERE High Safe Operating Area (100% Tested) SILICON2 A @ 80 VPOWER TRANSISTORS

Order this documentMOTOROLAby MJE15028/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15028Complementary Silicon PlasticMJE15030*Power TransistorsPNP*MJE15029. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 AmpereshFE = 40 (Min) @ IC = 3.0 Adc *MJE15031hFE = 20 (Min) @ IC = 4.0 Adc*Motorola Preferred Device

Order this documentMOTOROLAby MJ15022/DSEMICONDUCTOR TECHNICAL DATANPNMJ15022MJ15024 *Silicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications.16 AMPERE High Safe Operating Area (100% Tested) SILICON2 A @ 80 VPOWER TRANSISTORS

PBLS1502Y; PBLS1502V15 V PNP BISS loadswitchRev. 02 4 November 2004 Product data sheet1. Product profile1.1 General descriptionLow VCEsat PNP transistor and NPN resistor-equipped transistor in one package.Table 1: Product overviewType number PackagePhilips EIAJPBLS1502Y SOT363 SC-88PBLS1502V SOT666 -1.2 Features Low VCEsat (BISS) transistor and resistor-equipped tran

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

MJ15023 (PNP),MJ15025 (PNP)Silicon Power TransistorsThe MJ15023 and MJ15025 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area16 AMPERES High DC Current GainSILICON POWER TRANSISTORS Complementary to MJ15022 (NPN), MJ15024 (NPN)200 - 250 VOLTS, 250 WATTS T

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

NPN - MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) - 2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 - 250 VOLTS, 250 WATTS

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

PNP - MJ15023, MJ15025**MJ15025 is a Preferred DeviceSilicon Power TransistorsThe MJ15023 and MJ15025 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) -2 A @ 80 V High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Packa

Power Transistors2SB1502Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22753.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):

MJ15026 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER TO-3 High Current Capability High Power Dissipation Complementary to MJ15027ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 16 A Collector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER TRANSISTORS CJF15028 NPNCJF15029 PNPTO-220FP Fully IsolatedPlastic PackageDesigned for General Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 120 VCollector Emitter Voltage VCEO 120 VEmit

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package MJE15028, MJE15030MJE15029, MJE15031MJE15028, 15030 NPN PLASTIC POWER TRANSISTORSMJE15029, 15031 PNP PLASTIC POWER TRANSISTORSHigh frequency Drivers in Audio AmplifiersPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EB

Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DES

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE15028 DESCRIPTION With TO-220C package Complement to type MJE15029 High transition frequency DC current gain specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. PINNING PIN DESCR

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF1502G5 Main Product Characteristics: VDSS 150V RDS(on) 0.14(typ) ID 6A Mar ki ng a nd p in Sc he mati c di a gram SOT223 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

SMD Type TransistorsPNP TransistorsKXA15021.70 0.1 Features Collector Power Dissipation: PC=0.5W Collector Current: IC=-1.5A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -20 VEmitter-Base Voltage VEBO -5 VCollector Current -C

SMD Type TransistorsPNP Transistors2SA1502SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SC38631.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsNPN TransistorsKXC15021.70 0.1 Features Collector Power Dissipation: PC=0.5W Collector Current: IC=1.5A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 5 VCollector Current -Continu

MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDIS1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1502 is suitable device for DC to DC

MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDD1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1502 is suitable device for DC to DC

Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027APPLICATIONSDesigned for high power audio, disk head positioners , andother linear applications.ABSOLUTE MAXI

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029APPLICATIONSDesigned for use as highfreque

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028APPLICATIONSDesigned for use as highfre

isc Silicon PNP Darlington Power Transistor 2SB1502DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -4AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -4ACE(sat) CComplement to Type 2SD2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 55W HiFi o

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15023 MJ15025 DESCRIPTION With TO-3 package Complement to type MJ15022; MJ15024 Excellent safe operating area High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPT

isc Silicon PNP Power Transistors MJ15025DESCRIPTIONComplement to Type NPN MJ15024Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor MJ15026DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25(Min.)@I = 5AFE CCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 5ACE(sat CComplement to the PNP MJ15027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positi

isc Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

isc Silicon PNP Power Transistor MJ15027DESCRIPTIONHigh current capabilityHigh power dissipationComplement to the NPN MJ15026100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifierDC to DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA

isc Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028Minimum Lot-to-Lot variations for robust deviceperformance and reliable ope

isc Silicon PNP Power Transistors MJ15023DESCRIPTIONComplement to Type NPN MJ15022Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE