2N3867SM Todos los transistores

 

2N3867SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3867SM

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Ganancia de corriente contínua (hfe): 25

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de transistor bipolar 2N3867SM

 

2N3867SM Datasheet (PDF)

1.1. 2n3867smd05.pdf Size:337K _upd

2N3867SM
2N3867SM

PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 40V VEBO Emitter

3.1. 2n3867s.pdf Size:1098K _upd

2N3867SM
2N3867SM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 4.1. 2n3867u4.pdf Size:1098K _upd

2N3867SM
2N3867SM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

4.2. 2n3867.pdf Size:123K _cdil

2N3867SM
2N3867SM

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 40 V VEBO Em

 4.3. 2n3867.pdf Size:56K _microsemi

2N3867SM
2N3867SM

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min) Transistors DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc Low Collector-Emitter Saturat

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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