All Transistors. 2N3867SM Datasheet

 

2N3867SM Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3867SM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO252

 2N3867SM Transistor Equivalent Substitute - Cross-Reference Search

   

2N3867SM Datasheet (PDF)

 0.1. Size:337K  semelab
2n3867smd05.pdf

2N3867SM
2N3867SM

PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 High Voltage Hermetic Ceramic Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 40V VCEO Collector Emitter Voltage 40V VEBO Emitter

 7.1. Size:1098K  no
2n3867s.pdf

2N3867SM
2N3867SM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 8.1. Size:1098K  no
2n3867u4.pdf

2N3867SM
2N3867SM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 8.2. Size:123K  cdil
2n3867.pdf

2N3867SM
2N3867SM

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can PackageDesigned for High Speed, Medium Current Switching and High Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 40 VVEBO

 8.3. Size:56K  microsemi
2n3867.pdf

2N3867SM
2N3867SM

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3867APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min)Transistors DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc Low Collector-

Datasheet: 2N3862 , 2N3863 , 2N3864 , 2N3865 , 2N3866 , 2N3866A , 2N3866AUB , 2N3867 , TIP42C , 2N3868 , 2N3868SM , 2N3869 , 2N387 , 2N3876 , 2N3877 , 2N3877A , 2N3878 .

 

 
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