2N3868SM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3868SM  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO252

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2N3868SM datasheet

 0.1. Size:10K  semelab
 2n3868smd05.pdf pdf_icon

2N3868SM

2N3868SMD05 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm

 0.2. Size:10K  semelab
 2n3868smd.pdf pdf_icon

2N3868SM

2N3868SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 7.1. Size:1098K  no
 2n3868s.pdf pdf_icon

2N3868SM

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

MOSTRAR MÁS

Otros transistores... 2N3864, 2N3865, 2N3866, 2N3866A, 2N3866AUB, 2N3867, 2N3867SM, 2N3868, 2SC2073, 2N3869, 2N387, 2N3876, 2N3877, 2N3877A, 2N3878, 2N3879, 2N3879SM