2N39 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3905/DGeneral Purpose Transistors2N3905PNP Silicon*2N3906*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER12MAXIMUM RATINGS3Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 40 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3903/DGeneral Purpose Transistors2N3903NPN Silicon*2N3904*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3904NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 15Philips Semiconductors Product specificationNPN switching transistor 2N3904FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3906PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP switching transistor 2N3906FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

2N3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3904 2N3904 TO-92 / Bulk2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS2N3906TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

2N3906SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3906 2N3906 TO-92 / Bulk2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS2N3904TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

October 20112N3904 / MMBT3904 / PZT3904NPN General Purpose AmplifierFeatures This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.2N3904 PZT3904MMBT3904CCEECBTO-92 SOT-23 SOT-223BMark:1AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symb

2N3903C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 60 VCBOVEBO Emitter-Base Voltage 6.0 VIC Collector Current - Conti

October 20112N3906 / MMBT3906 / PZT3906PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Col

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

2N3906 MMBT3906 PZT3906CCEECC TO-92BBBESOT-223SOT-23Mark: 2APNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Vol

2N3905C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 40 VCBOVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Conti

2N3903S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 1 (2N3903)2N3903S/S TRCD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung ElectronicsPrinted in Korea.Page : 2 (2N3903)

2N3958Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)1.0 to 4.5 50 1 50 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl

2N3906Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2N3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability ratingPurpose Am

NPN General - PurposeAmplifier2N3904DescriptionThis device is designed as a general-purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to www.onsemi.com100 MHz as an amplifier.MAXIMUM RATINGS(Values are at TA = 25C unless otherwise noted.) (Note 1, Note 2)Symbol Parameter Value UnitVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N3903, 2N3904General PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1Collector-Base Voltage VCBO 60 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdcTotal Device Dissipation PD@ TA = 25

2N3906General PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR Pb-Free Packages are Available*32BASEMAXIMUM RATINGSRating Symbol Value Unit1EMITTERCollector - Emitter Voltage VCEO 40 VdcCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO-92CASE 29Total Device Dissipation @

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N3906 / MMBT3906 / PZT3906PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierand switching applications at collector currents of 10 mAto 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCOrdering InformationPart Number Marking Package Packing Method Pack Quantity2N3906BU 2N3906 TO-92 3L Bulk 10000

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box2N3906

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906 FEATURES ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32N3904L-AB3-R 2N3904G-AB3-R SOT-89 B C E Tape Reel2N3904L-T92-B 2N3904G-T92-B TO-92 E B C

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1* Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box

2N3904NPN Silicon TransistorDescriptions PIN Connection General small signal application C Switching application Features B Low collector saturation voltage Collector output capacitance E Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25C Charact

2N3906NSemiconductor Semiconductor PNP Silicon TransistorDescriptions General small signal application Switching application Features Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki

2N3906SemiconductorSemiconductorPNP Silicon TransistorDescriptions General small signal application Switching applicationFeatures Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904Ordering InformationType NO. Marking Package Code2N3906 2N3906 T0-92Outline Dimensions unit : mm3.450.14.50.12.250

2N3904NSemiconductor Semiconductor NPN Silicon TransistorDescriptions General small signal application Switching application Features Low collector saturation voltage : VCE(sat)=0.3V(MAX.) @ IC=50mA, IB=5mA Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz Complementary pair with STA3906A Ordering Information Type NO. Mark

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

2N3996SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

2N3996SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3999SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

2N3931Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 180V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N3964DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.0

2N3998SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

2N3999SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3998SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3997SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3945Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N3997SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

2N3918Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 40V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 2A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

2N3904-T18 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230)5.31 (0.209)4.95 (0.195)4.52 (0.178)GENERAL PURPOSE HERMETIC NPN SILICON TRANSISTOR FEATURES SILICON NPN EPITAXIAL TRANSISTOR0.48 (0.019) HERMETIC TO18 PACKAGE 0.41 (0.016)dia. HI-REL SCREENING OPTIONS AVAILABLE HIGH SPEED SATURATED SWITCHING2.54 (0.100)Nom.APPLICATIONS A h

2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) G H1Emitter 111 Collector Current ICM: 200mA 2Base 222 Collector Base Voltage V(BR)CBO: 60V 3Collector 333JA DCLASSIFICATION OF hFE(1) Mi

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) AD Collector Current ICM: -200mA Collector Base Voltage V(BR)CBO: -40V BCLASSIFICATION OF hFE E CFProduct-Rank 2N3906-O 2N3906-YRange 100~

Boca Semiconductor Corp. (BSC)http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3905 / 2N3906PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3903 / 2N3904NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

Databook.fxp 1/14/99 11:29 AM Page B-501/99 B-52N3954, 2N3955, 2N3956N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Tem

Databook.fxp 1/13/99 2:09 PM Page B-701/99 B-72N3993, 2N3993AP-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C ChoppersReverse Gate Source & Reverse Gate Drain Voltage 25 V High Speed CommutatorsContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2.4 mW/CAt 25C free air temperature

Databook.fxp 1/13/99 2:09 PM Page B-8B-8 01/992N3994, 2N3994AP-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C ChoppersReverse Gate Source Voltage 25 V High Speed CommutatorsReverse Gate Drain Voltage 25 VContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2.4 mW/CAt 25C free air

Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE NPN silicon epitaxial planar transistor for switching and 1. EMITTER Amplifier applications 2. BASE As complementary type, the PNP transistor 2N3906 is Recommended 3. COLLECTOR This transistor is also available in the SOT-23 case wit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

SEMICONDUCTOR 2N3906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.27+0.10/-0.05_@VCE=-30V, VEB=-3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.

SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(

SEMICONDUCTOR 2N3904TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Max.)

SEMICONDUCTOR 2N3904VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=30V, VEB=3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8 0.05

SEMICONDUCTOR 2N3904ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.27+0.10/-0.05_@VCE=30V, VEB=3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.H

SEMICONDUCTOR 2N3906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=-30V, VEB=-3V.G 0.65Excellent DC Current Gain Linearity.H 0.

SEMICONDUCTOR 2N3904ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.F 1.27G 0.85Low Collector Outp

SEMICONDUCTOR 2N3904CTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage CurrentN DIM MILLIMETERS: ICEX=50nA(Max.), IBL=50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=30V, VEB=3V. GC 3.70 MAXD Excellent DC Current Gain Linearity.D 0.45E 1.00 Low Saturation Voltage F 1.27G 0.85: VCE(sat)=0.3V(Ma

SEMICONDUCTOR 2N3906TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(M

SEMICONDUCTOR 2N3904STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES _+A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=50nA(Max.), IBL=50nA(Max.)E 2.40+0.30/-0.201@VCE=30V, VEB=3V.G 1.90H 0.95Excellent DC Current Gain Linearity.J 0.13+

SEMICONDUCTOR 2N3906VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=-30V, VEB=-3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+FEATURES A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)E 2.40+0.30/-0.201G 1.90@VCE=-30V, VEB=-3V.H 0.95Excellent DC Current Gain Linearity.J 0

SEMICONDUCTOR 2N3904UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=50nA(Max.), IBL=50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=30V, VEB=3V.G 0.65Excellent DC Current Gain Linearity.H 0.15+0

SEMICONDUCTOR 2N3904SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=50nA(Max.), IBL=50nA(Max.)@VCE=30V, VEB=3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.Complementary to 2N3906SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMB

SEMICONDUCTOR 2N3906ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.F 1.27G 0.85Low Collect

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERIST

TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices Qualified Level JAN 2N3996 2N3997 2N3998 2N3999 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B 5.0 Collector Current IC Adc

Data Sheet No. 2N3960Generic Part Number:Type 2N39602N3960Geometry 0003Polarity NPNREF: MIL-PRF-19500/399Qual Level: JAN - JANTXVFeatures: General-purpose low-power NPNsilicon transistor. Housed in TO-18 case. Also available in chip form usingthe 0003 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/399 whichSemicoa meets in all cases.

2N3904(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25 unless otherwise note

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note

2N3904NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60VdcEmitter-Base VOltage VEBO6.0 VdcCollector Current IC200 mAdcPD 625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Tempera

2N3906PNP General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, T

Spec. No. : HE6240HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3906PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3906 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

Spec. No. : HE6218HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3904NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3904 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Fre

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

2N3904 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

2N3906 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

SEMICONDUCTOR2N3906ETECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONShippingDevice Marking22N3906E 2A 3000/Tape & Reel 1SC 89MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 4

SEMICONDUCTOR2N3906TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

SEMICONDUCTOR2N3906UTECHNICAL DATAGeneral Purpose Transistors PNP Silicon FEATURESWe declare that the material of product compliant withRoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping 2N3906U 2A 3000/Tape&Reel12SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25)Parameter Symbol Limits UnitCollectorEmitte

SEMICONDUCTOR2N3904STECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Marking Shipping32N3904S 1AM 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 Vdc3COLLECTOREmitterBase Vo

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40

SEMICONDUCTOR2N3904TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

SEMICONDUCTOR2N3904UTECHNICAL DATAGeneral Purpose Transistor We declare that the material of product compliance with RoHS requirements.ORDERING INFORMATION3Device Marking ShippingAM2N3904U 3000/Tape & Reel12SC-70 / SOT 323 MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 Vdc3COLLECTORCollectorBase Voltage VCBO 60 Vdc1Emi

NPN High Power Silicon Transistors2N3902 & 2N5157Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N3902 2N5157 UnitsCollector - Emitter Voltage VCEO 400 500 VdcEmitter - Base Voltage VEBO5.0 6.0 VdcCollector - Base Voltage VCBO 7.0 VdcBase Current IB 2.0 AdcCollector Current IC 3.5 AdcTotal

General Purpose Transistor2N3906-G (PNP)RoHS DeviceTO-92Features -PNP silicon epitaxial planar transistor for 0.185(4.70)switching and amplifier application.0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min.0.055 (1.14)0.020(0.51)0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55)0.015(0.38) -This transistor is available in the S

2N3904 / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

2N3906 / DescriptionsTO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

2N3904NPN / Pinning / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. PIN1Collector / Features PIN 2Base 1PIN 3Emitter 23 Low current, Low voltage. / Equivalent Circuit / Applications

2N3906PNP / Descriptions / Pinning TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. PIN1Collector PIN 2Base / Features PIN 3Emitter 123 Low current, Low voltage. / Equivalent Circuit / Applications

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltageMARKING: 2AMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -6 VIC Collector Current -Continuous -0.2 APC Collector Power Dissipation 0.5 WTh

Plastic-Encapsulate Transistors TRANSISTOR (NPN)FEATURES U Compliment to 2N3906 Low current Low voltage MARKING: 1A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.

isc Silicon PNP Power Transistor 2N3906DESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )NPN complement to Type 2N3904.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon PNP Power Transistor 2N3906SDESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )APPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuo

isc Silicon NPN Power Transistor 2N3902DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

TITAN MICRO TITAN MICRO2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistorfor switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta