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KSA1614O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSA1614O
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar KSA1614O

 

KSA1614O Datasheet (PDF)

 7.1. Size:47K  fairchild semi
ksa1614.pdf

KSA1614O
KSA1614O

KSA1614Low Frequency Power AmplifierPower Regulator Collector-Base Voltage : VCBO = - 80V Collector Dissipation : PC=20W (TC=25C)TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 55 VVEBO Emi

 7.2. Size:110K  inchange semiconductor
ksa1614.pdf

KSA1614O
KSA1614O

Inchange Semiconductor Product Specification Silicon PNP Power Transistors KSA1614 DESCRIPTION With TO-220F package Collector-base voltage: VCBO=-80V Collector dissipation: PC=20W(TC=25) APPLICATIONS Power regulator Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute max

 9.1. Size:45K  fairchild semi
ksa1625.pdf

KSA1614O
KSA1614O

KSA1625High Voltage Switch High Breakdown Voltage High Speed SwitchingTO-9211. Emitter 2. Collector 3. BasePNP Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -400 VVCEO Collector-Emitter Voltage -400 VVEBO Emitter-Base Voltage -7 VIB Base Current -0.25 AIC Collector Current (D

 9.2. Size:88K  utc
ksa1625.pdf

KSA1614O
KSA1614O

UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc(max)=625mW 1*Low collector-Emitter saturation voltageAPPLICATIONS *Telephone switching *High voltage switch TO-921:EMITTER 2: COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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