KSA1625M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KSA1625High Voltage Switch High Breakdown Voltage High Speed SwitchingTO-9211. Emitter 2. Collector 3. BasePNP Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -400 VVCEO Collector-Emitter Voltage -400 VVEBO Emitter-Base Voltage -7 VIB Base Current -0.25 AIC Collector Current (D

UTC KSA1625 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc(max)=625mW 1*Low collector-Emitter saturation voltageAPPLICATIONS *Telephone switching *High voltage switch TO-921:EMITTER 2: COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise

KSA1614Low Frequency Power AmplifierPower Regulator Collector-Base Voltage : VCBO = - 80V Collector Dissipation : PC=20W (TC=25C)TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 55 VVEBO Emi

Inchange Semiconductor Product Specification Silicon PNP Power Transistors KSA1614 DESCRIPTION With TO-220F package Collector-base voltage: VCBO=-80V Collector dissipation: PC=20W(TC=25) APPLICATIONS Power regulator Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute max