KSB1022 Todos los transistores

 

KSB1022 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSB1022
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5000
   Paquete / Cubierta: TO220
 

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KSB1022 Datasheet (PDF)

 8.1. Size:46K  fairchild semi
ksb1023.pdf pdf_icon

KSB1022

KSB1023Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1413TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 40 VVEBO Emitter-Base

 9.1. Size:50K  fairchild semi
ksb1015.pdf pdf_icon

KSB1022

KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collecto

 9.2. Size:47K  fairchild semi
ksb1097.pdf pdf_icon

KSB1022

KSB1097Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1588TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collector Curre

 9.3. Size:51K  fairchild semi
ksb1017.pdf pdf_icon

KSB1022

KSB1017Power Amplifier Applications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 80 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 4 AIB Base Current - 0.4 APC Co

Otros transistores... KSA992P , KSB1015 , KSB1015O , KSB1015Y , KSB1017 , KSB1017O , KSB1017R , KSB1017Y , TIP122 , KSB1023 , KSB1097 , KSB1097O , KSB1097R , KSB1097Y , KSB1098 , KSB1098O , KSB1098R .

 

 
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