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KSB1097 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSB1097
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar KSB1097

 

KSB1097 Datasheet (PDF)

 ..1. Size:47K  fairchild semi
ksb1097.pdf

KSB1097
KSB1097

KSB1097Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1588TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collector Curre

 8.1. Size:46K  fairchild semi
ksb1098.pdf

KSB1097
KSB1097

KSB1098Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1589TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collect

 9.1. Size:50K  fairchild semi
ksb1015.pdf

KSB1097
KSB1097

KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collecto

 9.2. Size:51K  fairchild semi
ksb1017.pdf

KSB1097
KSB1097

KSB1017Power Amplifier Applications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 80 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 4 AIB Base Current - 0.4 APC Co

 9.3. Size:46K  fairchild semi
ksb1023.pdf

KSB1097
KSB1097

KSB1023Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1413TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 40 VVEBO Emitter-Base

 9.4. Size:212K  onsemi
ksb1015.pdf

KSB1097
KSB1097

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:213K  onsemi
ksb1017.pdf

KSB1097
KSB1097

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: UMX3NFHA

 

 
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History: UMX3NFHA

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