KSB1121 Todos los transistores

 

KSB1121 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSB1121
   Código: 1121
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 32 pF
   Ganancia de corriente contínua (hfe): 140
   Paquete / Cubierta: SOT89
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KSB1121 Datasheet (PDF)

 ..1. Size:430K  fairchild semi
ksb1121.pdf pdf_icon

KSB1121

July 2005KSB1121PNP Epitaxial Planar Silicon TransistorHigh Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621Marking1 1 2 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Pa

 9.1. Size:52K  fairchild semi
ksb1116s.pdf pdf_icon

KSB1121

KSB1116SAudio Frequency Power Amplifier & Medium Speed SwitchingTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -6 VIC Collector Current (DC) -1 AICP * Collector Curren

 9.2. Size:52K  fairchild semi
ksb1116 a.pdf pdf_icon

KSB1121

KSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616ATO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSB1116 -60 V : KSB1116A -80 VVCEO Collector-Emitter Voltage : KSB1116 -50 V : KSB111

 9.3. Size:46K  fairchild semi
ksb1149.pdf pdf_icon

KSB1121

KSB1149Low Collector Saturation VoltageBuilt-in Damper Diode at E-C High DC Current Gain High Power Dissipation : PC=1.3W (Ta=25C)TO-12611. Emitter 2.Collector 3.BasePNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEB

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 5551 | 2SD1984 | BSP62T1 | BLX84 | 2SD107 | BC262B | 2SB896A

 

 
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