KSB1366G Todos los transistores

KSB1366 LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

KSB13003C SEMIHOW REV.A0, January 2012 KSB13003C KSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E... See More ⇒

KSB13003AR KSB13003AR SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless ... See More ⇒

KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003H KSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte... See More ⇒

KSB13003A KSB13003A SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High Voltage Switch Mode Application gg pp High Speed Switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitter Collector-B... See More ⇒

KSB13002AR KSB13002AR SEMIHOW REV.A1,May 2008 KSB130 002AR KSB13002AR High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 0.8 Amperes NPN Silicon Power Transistor Absolute M... See More ⇒

KSB13003HR KSB13003HR SEMIHOW REV.A0,Oct 2007 KSB130 003HR KSB13003HR High Voltage Switch Mode Application gg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collect... See More ⇒

KSB13003ER KSB13003ER SEMIHOW REV.A0,Apr 2008 KSB130 003ER KSB13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute M... See More ⇒

KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CR KSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector ... See More ⇒