KSB772O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSB772O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 55 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar KSB772O
KSB772O Datasheet (PDF)
ksb772.pdf
KSB772 Audio Frequency Power Amplifier Low Speed Switching Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3
ksb772.pdf
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Otros transistores... KSB744AO , KSB744AR , KSB744AY , KSB744O , KSB744R , KSB744Y , KSB772 , KSB772G , D882P , KSB772R , KSB772Y , KSB794 , KSB794O , KSB794R , KSB794Y , KSB795 , KSB795O .
History: KSC1623
History: KSC1623
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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