KSC1008Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC1008Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO92
Búsqueda de reemplazo de KSC1008Y
KSC1008Y Datasheet (PDF)
ksc1008.pdf

September 2006KSC1008tmNPN Epitacial Silicon TransistorFeatures Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mWTO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C
ksc1008.pdf

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ksc1009.pdf

KSC1009High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted S
Otros transistores... KSB834Y , KSB906 , KSB906O , KSB906Y , KSB907 , KSC1008 , KSC1008G , KSC1008R , TIP122 , KSC1009 , KSC1009G , KSC1009R , KSC1009Y , KSC1070 , KSC1072 , KSC1096 , KSC1098 .
History: BDW42 | KRA101M | QS5Y2
History: BDW42 | KRA101M | QS5Y2



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