KSC1008Y Specs and Replacement
Type Designator: KSC1008Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
KSC1008Y Transistor Equivalent Substitute - Cross-Reference Search
KSC1008Y detailed specifications
ksc1008.pdf
September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage VCBO=80V. Collector Current IC=700mA Collector Power Dissipation PC=800mW TO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C... See More ⇒
ksc1008.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
ksc1009.pdf
KSC1009 High Voltage Amplifier High Collector-Base Voltage VCBO=160V Collector Current IC=700mA Collector Power Dissipation PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted S... See More ⇒
Detailed specifications: KSB834Y , KSB906 , KSB906O , KSB906Y , KSB907 , KSC1008 , KSC1008G , KSC1008R , BC557 , KSC1009 , KSC1009G , KSC1009R , KSC1009Y , KSC1070 , KSC1072 , KSC1096 , KSC1098 .
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