KSC2333O Todos los transistores

 

KSC2333O Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSC2333O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar KSC2333O

 

Principales características: KSC2333O

 7.1. Size:56K  fairchild semi
ksc2333.pdf pdf_icon

KSC2333O

KSC2333 High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base

 8.1. Size:40K  fairchild semi
ksc2331.pdf pdf_icon

KSC2333O

KSC2331 Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage VCBO=80V Collector Current IC=700mA Collector Dissipation PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage

 8.2. Size:38K  fairchild semi
ksc2330a.pdf pdf_icon

KSC2333O

KSC2330A Color TV Chroma Output Collector-Base Voltage VCBO=400V Current Gain Bandwidth Product fT=50MHz (TYP.) TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7

 8.3. Size:52K  fairchild semi
ksc2335.pdf pdf_icon

KSC2333O

KSC2335 High Speed, High Voltage Switching Industrial Use TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current (Puls

Otros transistores... KSC2330O , KSC2330R , KSC2330Y , KSC2331 , KSC2331O , KSC2331R , KSC2331Y , KSC2333 , 13003 , KSC2333R , KSC2333Y , KSC2334 , KSC2334O , KSC2334R , KSC2334Y , KSC2335 , KSC2335F .

 

 
Back to Top

 


 
.