KSC2785 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC2785
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar KSC2785
KSC2785 Datasheet (PDF)
ksc2785.pdf
KSC2785Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage : VCBO=60VTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC
ksc2785.pdf
KSC2785 NPN EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY AMPLIFIERTO-92SHIGH FREQUENCY OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60VABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mACollector Dissipation PC 250 mW
ksc2787.pdf
KSC2787FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP) Low Output Capacitance : Cob=2.0pF (TYP)TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VVCEO Co
ksc2784.pdf
KSC2784Audio Frequency Low Noise Amplifier Complement to KSA1174TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 50 mAIB Base Current 10 mAPC
ksc2786.pdf
KSC2786TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product : fT=600MHz (TYP) High Power Gain : GPE=22dB at f=100MHzTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter
ksc2786.pdf
KSC2786 NPN EPITAXIAL SILICON TRANSISTORTV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,TO-92SMIXER, OSCILLATOR High Current-Gain-Bandwidth Product fT=600MHz (Typ) High Power Gain GPE=22dB at f=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 4 VCollector Curr
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC895-1 | 2N3134
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050