2N395 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N395
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2 MHz
Capacitancia de salida (Cc): 24 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO5
Búsqueda de reemplazo de 2N395
2N395 datasheet
2n3958.pdf
2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-
2n3954 2n3955 2n3956.pdf
Databook.fxp 1/14/99 11 29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Tem
2n3957 2n3958.pdf
Databook.fxp 1/14/99 11 30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Temperature
Otros transistores... 2N3942 , 2N3943 , 2N3944 , 2N3945 , 2N3946 , 2N3947 , 2N3948 , 2N394A , 431 , 2N3950 , 2N3953 , 2N3959 , 2N396 , 2N3960 , 2N3960UB , 2N3961 , 2N3962 .
Liste
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