KSC5026N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5026N  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 1100 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de KSC5026N

- Selecciónⓘ de transistores por parámetros

 

KSC5026N datasheet

 7.1. Size:120K  fairchild semi
 ksc5026m.pdf pdf_icon

KSC5026N

January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (D

 7.2. Size:226K  onsemi
 ksc5026m.pdf pdf_icon

KSC5026N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:58K  fairchild semi
 ksc5024.pdf pdf_icon

KSC5026N

KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (

 8.2. Size:302K  fairchild semi
 ksc5021.pdf pdf_icon

KSC5026N

October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC C

MOSTRAR MÁS

Otros transistores... KSC5024O, KSC5024R, KSC5024Y, KSC5025, KSC5025O, KSC5025R, KSC5025Y, KSC5026, BC548, KSC5026O, KSC5026R, KSC5027, KSC5027F, KSC5027N, KSC5027O, KSC5027R, KSC5028