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KSC5027F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSC5027F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 1100 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220F
 

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KSC5027F Datasheet (PDF)

 ..1. Size:74K  samsung
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KSC5027F

KSC5027F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYHIGH SPEED SWITCHINGTO-220FWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC

 ..2. Size:215K  inchange semiconductor
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KSC5027F

isc Silicon NPN Power Transistor KSC5027FDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUT

 7.1. Size:53K  fairchild semi
ksc5027.pdf pdf_icon

KSC5027F

KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

 7.2. Size:24K  samsung
ksc5027.pdf pdf_icon

KSC5027F

KSC5027 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A1.Base 2.Collector 3.Emitter

Otros transistores... KSC5025O , KSC5025R , KSC5025Y , KSC5026 , KSC5026N , KSC5026O , KSC5026R , KSC5027 , TIP3055 , KSC5027N , KSC5027O , KSC5027R , KSC5028 , KSC5028N , KSC5028O , KSC5028R , KSC5029 .

History: SRA2210UF

 

 
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