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KSC5031N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSC5031N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 140 W
   Tensión colector-base (Vcb): 1100 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de transistor bipolar KSC5031N

 

KSC5031N Datasheet (PDF)

 7.1. Size:109K  inchange semiconductor
ksc5031.pdf

KSC5031N
KSC5031N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching speed Wide Area of Safe Operation High Reliability APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag

 8.1. Size:142K  fairchild semi
ksc5030f.pdf

KSC5031N
KSC5031N

KSC5030FHigh Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating AreaTO-3PF11.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 6 AICP * Collector Current (Pulse) 20 APC Collect

 8.2. Size:54K  fairchild semi
ksc5039.pdf

KSC5031N
KSC5031N

KSC5039High Voltage Power Switch Switching ApplicationTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 AIB Base

 8.3. Size:58K  fairchild semi
ksc5039f.pdf

KSC5031N
KSC5031N

KSC5039FHigh Voltage Power Switch Switching ApplicationTO-220F11.Base 2.Collector 3.EmitterNPN Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A

 8.4. Size:24K  samsung
ksc5030pwd.pdf

KSC5031N
KSC5031N

KSC5030 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILTYTO-3PHIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25

 8.5. Size:23K  samsung
ksc5039.pdf

KSC5031N
KSC5031N

KSC5039 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATIONABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W1.Base

 8.6. Size:24K  samsung
ksc5039f.pdf

KSC5031N
KSC5031N

KSC5039F NPN PLANAR SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATION TO-220FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W

 8.7. Size:116K  inchange semiconductor
ksc5030f.pdf

KSC5031N
KSC5031N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col

 8.8. Size:138K  inchange semiconductor
ksc5039.pdf

KSC5031N
KSC5031N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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