KSC5039 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5039  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO220

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KSC5039 datasheet

 ..1. Size:54K  fairchild semi
 ksc5039.pdf pdf_icon

KSC5039

KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base

 ..2. Size:23K  samsung
 ksc5039.pdf pdf_icon

KSC5039

KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W 1.Base

 ..3. Size:138K  inchange semiconductor
 ksc5039.pdf pdf_icon

KSC5039

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO = 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec

 0.1. Size:58K  fairchild semi
 ksc5039f.pdf pdf_icon

KSC5039

KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A

MOSTRAR MÁS

Otros transistores... KSC5031N, KSC5031O, KSC5031R, KSC5032, KSC5034, KSC5035, KSC5036, KSC5038, 8050, KSC5039F, KSC5042, KSC5045, KSC5046, KSC5047, KSC5048, KSC5054, KSC5060